About

I received my B.S. in Electrical Engineering from the Georgia Institute of Technology in 2009. During my time there I completed a Research Experience for Undergraduates (REU) at Cornell University along with multiple semesters of research with the Georgia Tech Research Institute (GTRI). I began graduate work at Virginia Tech, and in 2014 I defended my thesis entitled “Electrical Characterization of Ruthenium Dioxide Schottky Contacts on GaN” and successfully obtained my M.S. in Electrical Engineering. Upon completion, I was awarded the Bradley Research Fellowship and continued my work in pursuit of a Ph.D. in Electrical Engineering at Virginia Tech. I am currently exploring the effect that material growth parameters have on fabricated high power Gallium-Nitride devices including Schottky diodes, PN Diodes, and HFETs.

Noah Allen: VT Grad Student Highlight

Education:

• Doctor of Philosophy in Electrical Engineering - Doctoral Bradley Fellow Virginia Tech, Blacksburg, Virginia Expected Graduation: July 2019

• Masters of Science in Electrical Engineering Virginia Tech, Blacksburg, Virginia Graduated: December 2014

• Bachelor of Science in Electrical Engineering Georgia Institute of Technology, Atlanta, Georgia Graduated: May 2009

Publications:

• [Submitted] N. Allen, M. Xiao, X. Yan, K. Sasaki, M. Tadjer, J. Ma, R. Zhang, H. Wang, Y. Zhang, Vertical Ga₂O₃ Schottky Barrier Diodes with Small-Angle Beveled Field Plates: A Record BFOM of 0.6GW/cm² Electron Device Letters (EDL)
• [In progress] Allen, N. Ru/GaN Schottky Barrier Inhomogeneity Dependence on Annealing Temperature.
• [In progress] Allen, N., Ciarkowski, T., Carlson, E., Guido, L., Impact of increasing Ammonia on deep level defects in GaN grown by MOCVD Journal Not Yet Decided
• [SUBMITTED] Allen, N., Ciarkowski, T., Carlson, E., Guido, L., Characterization of Inhomogeneous Ni/GaN Schottky Diode with a Modified Log-Normal Distribution of Barrier Heights Semiconductor Science and Technology
• Wang, J., Youtsey, C., McCarthy, R., Reddy, R., Allen, N., Guido, L., Xie, J., Beam, E. and Fay, P., 2017. Thin-film GaN Schottky diodes formed by epitaxial lift-off. Applied Physics Letters, 110(17), p.173503.
• Chern, K.T., Allen, N., Ciarkowski, T.A., Laboutin, O.A., Welser, R.E. and Guido, L.J., 2016. GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes. Materials Science in Semiconductor Processing, 55, pp.2-6.
• Nguyen, P.D., Clavel, M.B., Goley, P.S., Liu, J.S., Allen, N., Guido, L.J. and Hudait, M.K., 2015. Heteroepitaxial Ge MOS devices on Si using composite AlAs/GaAs buffer. IEEE Journal of the Electron Devices Society, 3(4), pp.341-348.
• Allen, N. Electrical Characterization of Ruthenium Dioxide Schottky Contacts on GaN. Thesis Virginia Tech, 2014.
• Chern, K.T., Guido, L.J., Ciarkowski, T.A., Allen, N., Laboutin, O.A., Welser, R.E. and Elarde, V.C., 2014, June. GaInN/GaN-Ni/Au transparent conducting oxide Schottky barrier solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) (pp. 1139-1142). IEEE.
• Allen, N., Pinto, P., Traore, A. and Agah, M., 2011, October. Paper-based capacitive mass sensor. In SENSORS, 2011 IEEE (pp. 562-564). IEEE.
• Allen, N. Using Near-Field Holography to Investigate Super Hydrophobic Surfaces. Cornell REU, 2008.

Recent Projects:

• MMR Probe Station
  Rebuild with
  Helium Cryopump
• LabVIEW Controlled
  Compressor
• LabVIEW I-V and C-V
  Data Analysis Program
• LabVIEW DDLTS and CCDLTS Analysis
  Program
• Cleanroom Fabricated
  PN Diodes on GaN
• Mercury Probe
  Adapter
• Reverse Engineering the D750 Shutter
  for Remote Control
• Creating an Ethernet Controlled Variable ND Filter
• ECE5210
  Final Project