[In progress] Modeling forward and reverse IVT Schottky characteristics on GaN with a Log-Normal barrier height distribution

Paper is being written and will be submitted shortly but below is some data which is expected to accompany the publication.

Having completed my Masters of Science reviewing and understanding Schottky diode models I realized that there was a problem. There are a handful of exceptions but basically, experiments published in the literature will create a Schottky diode on some material and then explain the non-ideal results by invoking ‘barrier height inhomogeneity’ and sometimes they will prove it with an IVT measurement. The problem with this is that the IVT data is basically meaningless unless you can use it to prove why something is happening. In other words, you’re fitting data just to fit it.

This paper attempts to expand the Werner-Güttler method to a more complex system so that a follow up paper based on RuOx can use the ‘new’ model and explain why annealing or deposition methods can help or hurt your Schottky barrier. Below is the effective barrier height over a wide temperature range where the solid line is the ‘new’ model proposed in this paper.

Barrier Height Temperature Dependance