[In progress] Impact of increasing Ammonia on deep level defects in GaN grown by MOCVD

Paper is being written and will be submitted shortly but below is some data which is expected to accompany the publication.

We’ve found that simple decreasing the free carrier concentration by lowering the silane, a point will exist where the film will simple become insulative. Ideally, the switchover concentration where this occurs would happen at very low magnitudes so that the free carrier concentration can be controlled over a large range. In reality this point depends on the growth conditions. In this study we vary the Ammonia flow during growth while keeping the growth rate and free carrier concentration constant so that the deep level traps can be studied. Below is the preliminary data taken from DLTS, SSPC, and DLOS measurements which will be presented in an upcoming journal article.