• AlAs 1
• DLOS 1
• DLTS 1
• GaAs 1
• GaN 7
• GaOx 1
• Ge 1
• IV 1
• IVT 2
• MEMs 1
• MOS 1
• Ruthenium 1
• Schottky 1
• TCO 1
• breakdown 1
• capacitor 1
• etching 1
• hydrophobic 1
• inhomogeniety 2
• lift-off 1
• mass 1
• nanoscale 1
• schottky 5
• sensor 1
• silicon 1
• solar cell 2
• surfaces 1
• traps 1

AlAs

• Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer March 19, 2015

DLOS

• [In progress] Impact of increasing Ammonia on deep level defects in GaN grown by MOCVDMarch 13, 2019

DLTS

• [In progress] Impact of increasing Ammonia on deep level defects in GaN grown by MOCVDMarch 13, 2019

GaAs

• Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer March 19, 2015

GaN

• [In progress] Ru/GaN Schottky Barrier Inhomogeneity Dependence on Annealing TemperatureMarch 13, 2019
• [In progress] Impact of increasing Ammonia on deep level defects in GaN grown by MOCVDMarch 13, 2019
• [SUBMITTED] Characterization of Inhomogeneous Ni/GaN Schottky Diode with a Modified Log-Normal Distribution of Barrier HeightsMarch 12, 2019
• Thin-film GaN Schottky diodes formed by epitaxial lift-offFebruary 24, 2017
• GaInN/GaN Solar Cells with Ni/Au Schottky ElectrodesJanuary 18, 2016
• [MS Thesis] Electrical Characterization of Ruthenium Dioxide Schottky Contacts on GaNDecember 09, 2014
• GaInN/GaN – Ni/Au Transparent Conducting Oxide Schottky Barrier Solar CellsJune 08, 2014

GaOx

• [In progress] Vertical Ga₂O₃ Schottky Barrier Diodes with Small-Angle Beveled Field Plates: A Record BFOM of 0.6GW/cm²June 13, 2019

Ge

• Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer March 19, 2015

IV

• [In progress] Vertical Ga₂O₃ Schottky Barrier Diodes with Small-Angle Beveled Field Plates: A Record BFOM of 0.6GW/cm²June 13, 2019

IVT

• [In progress] Ru/GaN Schottky Barrier Inhomogeneity Dependence on Annealing TemperatureMarch 13, 2019
• [SUBMITTED] Characterization of Inhomogeneous Ni/GaN Schottky Diode with a Modified Log-Normal Distribution of Barrier HeightsMarch 12, 2019

MEMs

• Paper-Based Capacitive Mass SensorDecember 01, 2010

MOS

• Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer March 19, 2015

Ruthenium

• [MS Thesis] Electrical Characterization of Ruthenium Dioxide Schottky Contacts on GaNDecember 09, 2014

Schottky

• [MS Thesis] Electrical Characterization of Ruthenium Dioxide Schottky Contacts on GaNDecember 09, 2014

TCO

• GaInN/GaN – Ni/Au Transparent Conducting Oxide Schottky Barrier Solar CellsJune 08, 2014

breakdown

• [In progress] Vertical Ga₂O₃ Schottky Barrier Diodes with Small-Angle Beveled Field Plates: A Record BFOM of 0.6GW/cm²June 13, 2019

capacitor

• Paper-Based Capacitive Mass SensorDecember 01, 2010

etching

• Thin-film GaN Schottky diodes formed by epitaxial lift-offFebruary 24, 2017

hydrophobic

• Using Near-Field Holography to Investigate Super Hydrophobic SurfacesAugust 01, 2008

inhomogeniety

• [In progress] Ru/GaN Schottky Barrier Inhomogeneity Dependence on Annealing TemperatureMarch 13, 2019
• [SUBMITTED] Characterization of Inhomogeneous Ni/GaN Schottky Diode with a Modified Log-Normal Distribution of Barrier HeightsMarch 12, 2019

lift-off

• Thin-film GaN Schottky diodes formed by epitaxial lift-offFebruary 24, 2017

mass

• Paper-Based Capacitive Mass SensorDecember 01, 2010

nanoscale

• Using Near-Field Holography to Investigate Super Hydrophobic SurfacesAugust 01, 2008

schottky

• [In progress] Vertical Ga₂O₃ Schottky Barrier Diodes with Small-Angle Beveled Field Plates: A Record BFOM of 0.6GW/cm²June 13, 2019
• [In progress] Ru/GaN Schottky Barrier Inhomogeneity Dependence on Annealing TemperatureMarch 13, 2019
• [SUBMITTED] Characterization of Inhomogeneous Ni/GaN Schottky Diode with a Modified Log-Normal Distribution of Barrier HeightsMarch 12, 2019
• GaInN/GaN Solar Cells with Ni/Au Schottky ElectrodesJanuary 18, 2016
• GaInN/GaN – Ni/Au Transparent Conducting Oxide Schottky Barrier Solar CellsJune 08, 2014

sensor

• Paper-Based Capacitive Mass SensorDecember 01, 2010

silicon

• Using Near-Field Holography to Investigate Super Hydrophobic SurfacesAugust 01, 2008

solar cell

• GaInN/GaN Solar Cells with Ni/Au Schottky ElectrodesJanuary 18, 2016
• GaInN/GaN – Ni/Au Transparent Conducting Oxide Schottky Barrier Solar CellsJune 08, 2014

surfaces

• Using Near-Field Holography to Investigate Super Hydrophobic SurfacesAugust 01, 2008

traps

• [In progress] Impact of increasing Ammonia on deep level defects in GaN grown by MOCVDMarch 13, 2019